Fluorine plasma. Deep Reactive Ion Etching / SPTS technologies
Contacts : HERTH Etienne
/ BELIER Benoit
Fluorine ICP-DRIE SPTS offer a dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals. It's possible to used bias pulsing for notch control at oxide interfaces.
Deep reactive ion etching (DRIE) or Bosch Process is used for High etch rate in MEMS process with
High aspect ratio (AR) and Control of scalloping. However many process used continuous semi bosch process for etching low roughness Silicon and Germanium photonic circuit.
