Raith 150

Electron beam lithography / RAITH

Contacts : AASSIME Abdelhanin / COUDEVYLLE Jean-Rene

Raith 150 direct write lithography system is a Scanning Electron Microscope (SEM) combined with a hardware to perform electron beam exposures. It includes a beam blanker with a switch of 30 ns rise time and 200 kHz repetition frequency. The stage is controlled with a near 2 nm high precision X-Y displacement, thanks to laser interferometry. The sample size can vary from few millimeters up to 8” wafers.

Raith_150
Raith 150

Caractéristiques

Emitter : Field effect gun
Energy : 0.2 keV to 30 keV
Frequency : 10 MHz
Current : 5 pA to 5 nA
Apertures : 7.5 µm, 10 µm, 20 µm, 30 µm, 60 µm, 120 µm
Resolution : sub 20 nm
Positioning accuracy : 2 nm
Writing field : 1 µm² to 1000 µm² (100000x to 100x)
Substrates : 1 cm square to 8 inches wafer
Alignment accuracy : <30 nm
Magnification : 20x to 1000000x

Expertises

Patterning on image

Special feature Draw an image and apply a gds onto it. It is mainly used for contacting nano-object by e-beam lithography. The picture features a single SI nanowire with its contact pads made by lift off /evaporation of Ti (10 nm) / Au (160 nm).

Contacts : Jean-René Coudevylle

Applications

Sub 100nm lines for lift off applications

The picture feature the resist with the metal above before the lift off (inward angle profil) and the sub 100nm pattern after dissolving the resist (lift off step).

Contacts : Sébastien Boissier, Quandela Start-up.