Aligner Heidelberg MLA150

Mask less lithography laser writer system   /   HEILDELBERG INSTRUMENTS

Contacts :   BOUVILLE   David     /   BARDOU   Nathalie   /   HAROURI   Abdelmounaim

Location : E331

Submicron resolution @375nm: minimum size down to 0.8 μm Speed: Exposure of a 150 mm wafer in less than 16 minutes. Advanced alignment: The system achieves an alignment accuracy of 500 nm and digitally compensates for offset, rotation and scaling Focus: A dynamic autofocus system ensures sharp and uniform features. Absolute stability: An integrated environmental chamber with temperature-controlled (±0.1°C) laminar airflow minimises the effects of thermal expansion, ensuring stable and reproducible results.

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    MLA150
Expertises

NLOF5510

Best resolution obtained on fine (0.5µm) negative resin

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Contacts : A.Harouri

SU8

thickest resist insolated : 50µm

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Contacts : D.Bouville

AZ1512

Standart positive resist 1.2µm

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Contacts : N.Bardou

S1828

Positive photoresist 2,8µm thick

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Contacts : N.Bardou