DIELECTRIC DEPOSITION AND THERMAL TREATMENTS

 

A short description of the ressource.
 

Plassys MEB 550SL

Electron beam IAD deposition
Resp. : X. Lafosse, F. Maillard

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

Plassys MP 800 S

Sputtering deposition
Resp.: A. Martin, X. Lafosse

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

STS/Apsy bi-frequency

PECVD
Resp.: F. Maillard, A. Durnez

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

Unaxis D200

PECVD
Resp.: A. Durnez, F. Maillard

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

ALD Fiji

PECVD
Resp.: A. Durnez, F. Maillard

More
  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

Vegatec 056/58

Oxidation & Annealing Ovens

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

RTA AET

Fast Annealing

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

RTA Jipelec - JetFirst10

Fast Annealing

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  • Working Pressure: 2.10-4 mbar
  • Max substrate size: 3 wafers of 2" 
  • Gaz: Ar, O2, N2
  • Ion beam: 1-3 A – 50-300 eV
  • Insitu control: Ellipsometer Horiba Uvisel1 – Reflectometer Intellemetrics
  • Materials: SiO2, Ti3O5, HfO2, MgF2, Ta2O5, Al2O3

Staff

  • François MAILLARD
  • Xavier LAFOSSE
  • Alan DURNEZ
  • Cédric VILLEBASSE
  • Antoine MARTIN
  • Lætitia LEROY