CCP-RIE Corial 200S - 207
Capacitively Coupled Plasma - Reactive Ion Etching fluorine and oxygen plasma / CORIAL
Contacts : BAPTISTE Téo
/ LARTIGUE Louis
Location : E83
The main applications of this fluorine and oxigen Capacitively Coupled Plasma- Reactive Ion Etching (CCP-RIE) equipment are silicon etching, dielectric etching mask fabrication (Si3N4, SiO2), thin resist etching or descum.
Caractéristiques
- Gas Line : O2, SF6, CHF3, CF4, Ar
- Wafer Holder : 8" graphite plate
- Wafers thermalization : 5°C to 20°C
- End point detector : Laser interferometry 670,4 nm
- Etch materials : Electro and UV resist, Si, SiO2, Si3N4
