CCP-RIE Corial 200S - 208

Capacitively Coupled Plasma - Reactive Ion Etching fluorine and oxygen plasma / CORIAL

Contacts : LARTIGUE Louis / BAPTISTE Téo

Location : E83

This fluorine and oxigen Capacitively Coupled Plasma-Reactive Ion Etching (CCP-RIE) equipment is used for all materials etched using these chemistries : semiconductors (Si, Ge) dielectrics (SiO2, Si3N4), metals (W, Ti), organic or non organic resist etching (AZ, BCB) or descum.

Caractéristiques

Gas Line : O2, SF6, CHF3, CF4, Ar
Wafer Holder : 8" graphite plate
Wafers thermalization : 5°C to 20°C
End point detector : Laser interferometry 673,5 nm
Etch materials : All materials