Tubular furnaces Vegatec

2 oxidation furnaces / 2 tubular ovens   /   VEGATEC

Contacts :   MAILLARD   François     /   LAFOSSE   Xavier

Location : N.C.

A1-Silicon wet oxidation A2-Silicon dry oxidation B1-Thermal annealing for dielectric materials B2-Thermal annealing for other materials

  • Space
    Vegatec
  • Space
    Four tubulaire
  • Space
    FourVegatec

Caractéristiques

  • Deposit   :   Oxidation
  • Gas Line   :   A1 : N2, O2, Cl4 | A2 : N2, H2, O2, Cl4 | B1 : N2, Ar | B2 : N2, Ar, Ar-H, O2
  • Max sample size   :   4"
  • Max temperature   :   1200°C
  • Nature of the sample   :   Si only for oxidation (A1-A2) - Dielectric materials annealing (B1) - Other materials annealing(B2)
  • Working pressure   :   atm
Expertises

« V-Groove » of oxidized Silicon for SNOM probe fabrication

Oxidation of silicon with pyramidal pattern to produce SNOM probe head

  • Space

Contacts : francois.maillard@c2n.upsaclay.fr