PECVD UNAXIS D200

Plasma Enhanced Chemical Vapor Deposition - Dielectric Thin films / Unaxis

Contacts : DURNEZ Alan / MAILLARD François

This PECVD reactor is used for the deposition of common materials such as Silicon oxide or nitride and amorphous silicon. It can be used as well to deposit periodic multi-layers (DBR). No optical monitoring.

PECVD UNAXIS D200
ND200-1
ND200-2
ND200
ND200-3

Caractéristiques

Materials : SiO2, Si3N4, a:Si-H
Temperature : 150 °C -280°C
Max sample size : 4 mm height
Max sample size : 8 inches

Applications

Isolation

Silicon oxide or silicon nitride are deposited for basic isolation coatings.

Contacts : alan.durnez@c2n.upsaclay.fr

Amourphous silicon depositions

The deposition of amorphous silicon (a:Si) is possible on this equipment.

Contacts : alan.durnez@c2n.upsaclay.fr

DBR Coating /ARC coating

The deposition of basic optical filters is possible: Periodic Quarter Wavelength Optical Thicknesses (QWOT) SiO2/SiN (DBR) or single layer Anti reflective coating (ARC).

Contacts : alan.durnez@c2n.upsaclay.fr