Contacts : FERLAZZO Laurence
Location : E92_S04
Etching in an HF acid vapor atmosphere is a quasi-dry process. By controlled heating of thesubstrate, the amount of vaporon the wafer –and thus the etching rate of SiO2–can be adjustedin a reproducible means. Sincethe wafer is never incontact with any liquid, stiction-free MEMS release can be achievedwith a high yield. Typical etch rates of SiO2achievable with HF in vapor phase are in the range of 4–10μm/hour.
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