Centre for Nanoscience
and Nanotechnology

  • CNRS

PIMENT Platform

ICP-RIE SENTECH SI 500

Inductive Coupled Plasma - Reactive Ion Etching chlorine, bromine plasma   /   SENTECH INSTRUMENTS GMBH

Contacts :   LAOURINE   Feriel     /   FERLAZZO   Laurence

The SI 500 ICP plasma etching tool is configured for processing III-V compound semiconductors (GaAs, InP, GaN, InSb). This equipement is used to etch nanometric size patterns with high aspect ratio(photonic crystals, nanopilars,..) and micrometric patterns up to 20µm high.

  • Space
    ICP-RIE SENTECH SI500
  • Space
    ICP-RIE Sentech ICP1

Caractéristiques

  • Etch materials   :   GaAS, InP, AlGaAs, InGaAS
  • Mask   :   SiO2, Si3N4, metal
  • Gas Line   :   BCl3, Cl2, HBr, CH4, H2, Ar, N2 , O2, SF6
  • Wafer Holder   :   4” / Chuck : mechanical
  • HF generators power ICP   :   1000 Watts
  • HF generators power platen   :   600 Watts
  • Wafers thermalization   :   20°C à 190°C ; He-backside thermalization
  • End point detector   :   Laser interferometry 670 nm
Expertises

GaAs anisotropic deep etching

GaAs ridges : 10µm anisotropic deep etching

  • Space

Contacts : Laurence Ferlazzo

GaAs nanometric highly anisotropic etching

GaAs nanopilars for phononics w=55nm, h=480nm

  • Space

Contacts : Laurence Ferlazzo

InP nanometric highly anisotropic etching

Nanometric structures with high aspect ratio for photonic cristals, nanopilars,... 460nm high photonic cristals on InP

  • Space
  • Space

Contacts : Fabrice Raineri