ICP-RIE SENTECH SI 500S

Inductive Coupled Plasma - Reactive Ion Etching chlorine, bromine plasma   /   SENTECH INSTRUMENTS GMBH

Contacts :   FERLAZZO   Laurence     /   LAOURINE   Feriel

Location : E81

The SI 500 S ICP is a developpment etching process tool. Different plasma diagnostic tool are available. Multi chambers configuration offer a large potential of Chlorine and Bromine etching processes ; for example III-V compound semiconductors (GaAs, InP, GaN, InSb) but also other materials like inox, GeSn, ..

  • Space
    ICP-RIE SENTECH SI500S
  • Space
    ICP-RIE Sentech ICP2

Caractéristiques

  • Mask   :   Electro-and photo-sensible resist, SiO2, Si3N4
  • Gas Line   :   BCl3, Cl2, HBr, CH4, H2, Ar, N2 , O2, SF6
  • Wafer Holder   :   4” / Chuck : mechanical
  • Wafers thermalization   :   20°C à 190°C ; He-backside contact
  • End point detector   :   Laser interferometry 670 nm
  • HF generators power ICP   :   2000 Watts
  • HF generators power platen   :   600 Watts
  • Option   :   Multi chambers configuration to avoid cross contamination
  • Option   :   OES, mass spectrometry, electronic and ion probes for plasma diagnostics