CCP-RIE NEXTRAL (1)

Fluorine and oxigen CCP-RIE plasma / Nextral (Plasma-Therm)

Contacts : FERLAZZO Laurence

This fluorine and oxigen Capacitively Coupled Plasma-Reactive Ion Etching (CCP-RIE) equipment is used for all materials etched using these chemistries : semiconductors (Si, Ge) dielectrics (SiO2, Si3N4), metals (W, Ti), organic or non organic resist etching (AZ, BCB) or descum.

CCP-RIE NEXTRAL 63
Equipement CCP-RIE Nextral n°1

Caractéristiques

Materials : All materials
Mask : All material masks (resist, SiO2, Si3N4, metal)
Wafer Holder : 4” to small piece
HF generators power : 300 Watt at 13,56 MHz
Gas Line : SF6, CHF3, 02
Wafers thermalization : 5°C à 40°C
End point detector : Laser interferometry 670 nm

Expertises

W nanometric etching

Array of nanometric dots or lines in W ( for instance w=30nm / h=300nm absorbing W patterns for X-ray lithography

Contacts : laurence.ferlazzo@c2n.upsaclay.fr

SiO2 anisotropic nanometric etching

Array of nanometric dots or lines in SiO2 ( for instance w=30nm / h=450nm absorbing arrays for ionic radiation )

Contacts : Laurence Ferlazzo

Applications

Topography for 2D materials (graphen, MoS2) studies

Semiconducting two-dimensional (2D) materials are studied for nanomechanics, optoelectronics, and thermal transport with a perfect control over their properties including strain, doping, and heating on the nanoscale. Membranes of single-layer MoS2 or graphene suspended on pillar arrays are studied using Raman and photoluminescence spectroscopy.

Contacts : Laurence Ferlazzo