CCP-RIE NEXTRAL 63

Oxygen and fluorine CCP-RIE equipment   /   NEXTRAL

Contacts :   FERLAZZO   Laurence     /   CERCUS   Jean-Luc

C2N has a strong experience in nanometric etching for various applications (photonic,). On this equipement nanostructures can be patterned in SiO2, SiN, W, multilayers. Other applications are dielectric etching mask fabrication, resist etching or descum.

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    Equipement CCP-RIE Nextral n°1

Caractéristiques

  • Mode   :   No restricted access
  • Materials   :   All materials allowed. Usually SiO2, Si3N4, SiC _ Si, Ge, graphene, Nb, W, Ti / Multilayers _ Resists, polymers, polyamides, PDMS, BCB
  • Gas Line   :   SF6, CHF3, 02
  • Sample Size   :   up to 4"
  • Power   :   max 300W
  • Temperature range   :   5-40°C
  • Type of detectors   :   End point detector : laser interferometry 670nm
Expertises

W nanometric etching

Array of nanometric dots or lines in W ( for instance w=30nm / h=300nm absorbing W patterns for X-ray lithography

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Contacts : laurence.ferlazzo@c2n.upsaclay.fr

SiO2 anisotropic nanometric etching

Array of nanometric dots or lines in SiO2 ( for instance w=30nm / h=450nm absorbing arrays for ionic radiation )

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Contacts : Laurence Ferlazzo

Applications

Topography for 2D materials (graphen, MoS2) studies

Semiconducting two-dimensional (2D) materials are studied for nanomechanics, optoelectronics, and thermal transport with a perfect control over their properties including strain, doping, and heating on the nanoscale. Membranes of single-layer MoS2 or graphene suspended on pillar arrays are studied using Raman and photoluminescence spectroscopy.

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Contacts : Laurence Ferlazzo