CCP-RIE NEXTRAL (2)

Fluorine and oxigen CCP-RIE plasma. / Nextral (Plasma-Therm)

Contacts : FERLAZZO Laurence

The main applications of this fluorine and oxigen Capacitively Coupled Plasma- Reactive Ion Etching (CCP-RIE) equipment are silicon etching, dielectric etching mask fabrication ( Si3N4, SiO2), thin resist etching or descum.

CCP-RIE NEXTRAL 73
CCP-RIE Nextral equipement n°2

Caractéristiques

Materials : Electro-and photo-sensible resist, Si, SiO2, Si3N4
Mask : electro-and photo-sensible resist, SiO2, Si3N4
Wafer Holder : 6” to small piece
Gas Line : SF6, CHF3, 02
HF generators power : 300 Watt at 13,56 MHz
Wafers thermalization : 5°C à 40°C
End point detector : Laser interferometry 670nm

Expertises

Si3N4 etching mask

Contacts : Jean-Luc Cercus / Laurence Ferlazzo