IBE Roth & Rau Ionsys 500 1

Ion beam etching system / Secondary ion mass spectrometry   /   ROTH & RAU AG

Contacts :   MAILLARD   François  

Location : N.C.

In Ion Beam Milling (IBM) an inert ion beam is used for pure physical sputtering of the sample material. This technique is commonly used for structuring metals or other materials which are not accessible to chemical etch processes. Reactive Ion Beam Etching (RIBE) uses reactive process gases to generate a reactive ion beam. Physical and chemical etch components and related selectivities may be ea sily varied by the energy of the ion beam. Ion beam etching might serve applications difficult to be addressed by common etch technologies.

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    IBE ROTH&RAU 1
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    IBE 1

Caractéristiques

  • Mask   :   Electro-and photo-sensible resist, SiO2, Si3N4 ....
  • Gas Line   :   Ar source, O2
  • Wafer stage   :   Thermo liquid cooled wafer stage with mechanical clamp, He-backside contact, 20 rpm rotation, 0°…90° tilt
  • Wafer Holder   :   Max. 150 mm diameter, Wafers or non-standard samples with carrier based handling
  • End point detector   :   Secondary Ion Mass Spectrometer (SIMS) manufactured by Hiden Analytical, UK
  • Ion sources and neutralizers   :   220 mm ICP source (2 kV, 500 mA), Graphite or Mo Grids, RF Neutralizer
Expertises

Ti/Au on GaAs

Ti/Au etching on GaAs substrate

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Contacts : jean-luc.cercus@c2n.upsaclay.fr

End point detection by mass spectrométry

End point detection on Ti/Au/GaAs

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Contacts : jean-luc.cercus@c2n.upsaclay.fr