IBE ROTH&RAU 1

Ion Beam Etching (IBE) All materials End point detection by mass spectrometry   /   ROTH&RAU

Contacts :   CERCUS   Jean-Luc     /   MAILLARD   François

Ion beam Etching End point detection by Hiden SIMS (mass spectrometry) All materials Restricted access Gas available : Ar,O2,SF6,CH4,H2.

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    IBE 1

Caractéristiques

  • Mode   :   Restricted access
  • Gas Line   :   Ar,O2,SF6,CH4,H2.
  • Substrates   :   up to 6''
  • Substrate temperature   :   Down to 0°C
  • Detectors   :   End point detector : Hiden Mass Spectrometry
Expertises

Ti/Au on GaAs

Ti/Au etching on GaAs substrate

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Contacts : jean-luc.cercus@c2n.upsaclay.fr

End point detection by mass spectrométry

End point detection on Ti/Au/GaAs

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Contacts : jean-luc.cercus@c2n.upsaclay.fr