ICP-DRIE SPTS Rapier

Inductive Coupled Plasma - Reactive Ion Etching chlorine, bromine plasma   /   SPTS TECHNOLOGIES

Contacts :   HERTH   Etienne     /   BELIER   Benoit

Location : SB013- E86

Fluorine ICP-DRIE SPTS offer a dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals. It's possible to used bias pulsing for notch control at oxide interfaces. Deep reactive ion etching (DRIE) or Bosch Process is used for High etch rate in MEMS process with High aspect ratio (AR) and Control of scalloping. However many process used continuous semi bosch process for etching low roughness Silicon and Germanium photonic circuit.

Expertises

Photonics

We demonstrate a versatile mask-plasma combination for micro-and nanofabrication of different materials. Sidewall roughness and sidewall profile are controllable with recipe development.

Contacts : Herth & Leroux

Microsystems & Mircroelectronics

We demonstrate a versatile mask-plasma combination for micro-and nanofabrication of different materials through both Bosch and pseudo‐Bosch processes. The selection of masks transfer provides better flexibility and cost‐effective processing.

Contacts : Herth & Leroux

Microfluidics & Biodevices

We have demonstrated an isotropic plasma potential that is much higher than those that can be produced by isotropic wet etching of silicon for the generation of more complex forms.

Contacts : Herth & Leroux

Applications

Optoelectronics,Microsystems, Mircroelectronics, and Biodevices

Anisotropic and isotropic etch processes can be applied for a wide range of applications in Micro-and Nanophotonics, Micro- and Nanosystems, and Microfluidics.

Contacts : Herth