ICP-DRIE SPTS

Plasma‐deep reactive ion etching (ICP‐DRIE) system   /   SPTS

Contacts :   HERTH   Etienne     /   LE ROUX   Xavier

Various microscale and nanoscale features are exposed under plasma etching chemistries and are examined through both Bosch and pseudo‐Bosch processes using an inductive‐coupled plasma‐deep reactive ion etching (ICP‐DRIE) system. The selection of mask transfer proposed in our laboratory provides better flexibility and cost‐effective processing. Herein, the plasma etching mask transfer of the resistance of e‐beam resists, both negative and positive photoresist, as well as nanoparticles, and dielectric masks are investigated, but no metals are allowed. Our bank data results can be valuable for a wide range of applications, thus allowing a massive production using only a single commercial ICP DRIE tool, low-cost and compatible with an industrial perspective. Features: ICP power source: 3.6 KW Bias power source: 1.5 KW Dual source Process temperature: -10 °C to 40 °C Clamping chuck: Electrostatic Gas: SF6, C4F8, CHF3, CF4, O2, Ar, N2, He Mask: photoresist, e-beam resist, dielectrics (SiOx, SiNx..) Wafers: Max. 4 inches (100mm), and small samples Materials : Si, SiGe, Ge, SOI, Hybrid Orientation : <100>, <110>, <111> No metals are allowed

  • Space
    ICP-DRIE SPTS C2N-CNRS

Caractéristiques

  • Gas Line   :   SF6 500sccm
  • Gas Line   :   C4F8 500sccm
  • Type of substrate holder   :   4 inches-Si wafer carrier
  • Gas Line   :   Ar 500sccm
  • Gas Line   :   O2 1000sccm
  • Gas Line   :   CHF3 440sccm
  • Gas Line   :   CF4 370sccm
  • ICP power   :   Source 1 : 3.6 kW (Coil)
  • ICP power   :   Source 2 : 2 kW
  • ICP power   :   Platen : 1.5 kW
  • Mask   :   PR, Hard mask, but no metallic mask
  • Substrate temperature   :   -10°C - 40°C
  • Working pressure   :   1-150 mTorr
  • Max sample size   :   Max 4 Inches
  • Materials   :   Si, SiGe, Ge, Hybrid
  • Note   :   Metal- thin films must not be placed in the system, as this severely contaminates the system.
  • Goal thickness   :   Deep etching > 1 mm-Thick Silicon
Expertises

Photonics

We demonstrate a versatile mask-plasma combination for micro-and nanofabrication of different materials. Sidewall roughness and sidewall profile are controllable with recipe development.

Contacts : Herth & Leroux

Microsystems & Mircroelectronics

We demonstrate a versatile mask-plasma combination for micro-and nanofabrication of different materials through both Bosch and pseudo‐Bosch processes. The selection of masks transfer provides better flexibility and cost‐effective processing.

Contacts : Herth & Leroux

Microfluidics & Biodevices

We have demonstrated an isotropic plasma potential that is much higher than those that can be produced by isotropic wet etching of silicon for the generation of more complex forms.

Contacts : Herth & Leroux

Applications

Optoelectronics,Microsystems, Mircroelectronics, and Biodevices

Anisotropic and isotropic etch processes can be applied for a wide range of applications in Micro-and Nanophotonics, Micro- and Nanosystems, and Microfluidics.

Contacts : Herth