Centre for Nanoscience
and Nanotechnology

  • CNRS

PIMENT Platform

ICP-RIE STS Multiplex ICP

Inductive Coupled Plasma - Reactive Ion Etching chlorine plasma   /   SPTS TECHNOLOGIES

Contacts :   LAOURINE   Feriel     /   BELIER   Benoit

Location : E82

The STS Multiplex ICP, upgraded in 2021 by SPTS, offers large range materials etching possibility: insulators (SiO2, Si3N4 and SiC), silicon, metals (Al Alloys, Pt, Ti) and some polymers. One specific configuration chamber is possible to etch III/V compound semiconductors and avoid cross contamination. This equipment is also used for very depth etching of III/V material..

  • Space
    ICP-RIE STS Chlore
  • Space
    ICP Chlore STS

Caractéristiques

  • Mask   :   metal, alumine, electro-and photo-sensible resist, SiO2, Si3N4
  • Gas Line   :   SF6, Ar, CF4, C4F8, O2, H2, CH4, Cl2, BCl3
  • Wafer Holder   :   8” / Chuck : mechanical
  • Wafers thermalization   :   -15°C / +200°C ; He-backside contact
  • End point detector   :   Laser interferometry 670 nm
  • HF generators power ICP   :   2000 Watts
  • HF generators power platen   :   0-30 W and 0-300W
  • Option   :   TWO configuration chamber (III/V material OR metal), deep etch accepted
Expertises

Gravure GaAs

Premiers tests de gravure traversante

  • Space
  • Space
  • Space
  • Space

Contacts : Nathalie Isac

Gravure aluminium

Gravure aluminium avec un masque en alumine pour obtenir de aluminium poreux

  • Space

Contacts : Emmanuel Lefeuvre / Nathalie Isac

Gravure ZnS

Gravure ZnS avec masque en silice

  • Space

Contacts : Jérémy Ruscica / Stéphane Guilet / Nathalie Isac

Gravure GaN

GaN avec masque résine S1818

  • Space

Contacts : Nathalie Isac