STS Multiplex ICP

Chlorine, Fluorine plasma / SPTS Technologies / STS

Contacts : LAOURINE Feriel / BELIER Benoit

The STS Multiplex ICP, upgraded in 2021 by SPTS, offers large range materials etching possibility: insulators (SiO2, Si3N4 and SiC), silicon, metals (Al Alloys, Pt, Ti) and some polymers. One specific configuration chamber is possible to etch III/V compound semiconductors and avoid cross contamination. This equipment is also used for very depth etching of III/V material..

ICP-RIE STS Chlore
ICP Chlore STS

Caractéristiques

Mask : metal, alumine, electro-and photo-sensible resist, SiO2, Si3N4
Gas Line : SF6, Ar, CF4, C4F8, O2, H2, CH4, Cl2, BCl3
Wafer Holder : 8” / Chuck : mechanical
Wafers thermalization : -15°C / +200°C ; He-backside contact
End point detector : Laser interferometry 670 nm
HF generators power ICP : 2000 Watts
HF generators power platen : 0-30 W and 0-300W
Option : TWO configuration chamber (III/V material OR metal), deep etch accepted