CCP-RIE ADVANCE VACCUM

Capacitively Coupled Plasma - Reactive Ion Etching fluorine plasma / PLASMA-THERM

Contacts : BELIER Benoit

Location : E83

This Fluorine Reactive-ion etcher (RIE) provides etch capability for R&D, prototyping. This parallel-plate capacitance based systems is found in applications that include fundamental material studies, surface modification, semiconductor device fabrication. Dielectrics (e.g. SiNx, SiO2, a-Si, SiOxNy, ..),polymers (e.g. polyimide, BCB, photoresist), descum.

CCP-RIE ADVANCE VACCUM
RIE AV

Caractéristiques

Mask : Electro-and photo-sensible resist, SiO2, Si3N4 / AND METAL
Gas Line : SF6, CF4, C4F8, O2, Ar
Wafer Holder : 10” graphite plate
Wafers thermalization : 5°C à 40°C
End point detector : Laser interferometry 670 nm
HF generators power : 400 Watt at 13,56 MHz
Option : All Mask and all etch Material accepted

Expertises

Gravure SiOx

Recette & images de gravures

Contacts : Nathalie Isac / Jean-René Coudevylle

Gravure Fox 24 (HSQ)

Recette gravure Fox 24

Contacts : Nathalie Isac / Jean-René Coudevylle