IBE ROTH&RAU 2

Ion Beam Etching (IBE)   /   ROTH&RAU

Contacts :   MAILLARD   François     /   CERCUS   Jean-Luc

Ion beam Etching. Source 6 inches. End point detection by Hiden SIMS (mass spectrometry). All materials. Restricted access. Gas available : Ar only.

  • Space
    IBE2

Caractéristiques

  • Acceleration   :   0-1000V
  • Voltage   :   0-1000V
  • Tilt   :   0-90°
  • Gas Line   :   Ar;N2