XeF2 ( Xenon di-Fluoride) is a solid at atmosphere but will sublimate at vacuum. The tool uses an expansion chambers to alternatively sublimate the XeF2 and release it into the etch chamber. The etch rate is highly dependent to the material surface etched. XeF2 can be used to istoropically etch Si, Mo and Ge.
XeF2 Xactix
Vapor phase isotropic silicon etch for structure release
Vapor phase isotropic silicon etch for Nitride structure release
Caractéristiques
Mask : High selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum , Selectivity of silicon nitride better than 100:1 and selectivity to silicon dioxide is better than 1000:1
Gas Line : XeF2 ( Xenon di-Fluoride)
Wafer Holder : Max. 150 mm diameter, Wafers or non-standard samples
Etch materials : XeF2 can be used to istoropically etch Si, Mo, Ge, Nb, polysilicon, Ti and W.
Option : The etch progress can be monitored with binocular microscope through the transparent chamber lid.
