ICP-RIE Sentech SI 500
Inductive Coupled Plasma - Reactive Ion Etching fluorine plasma / SENTECH INSTRUMENTS GMBH
Contacts : EDMOND Samson
/ HERTH Etienne
Location : E83
ICP-RIE Fluorine plasma etcher SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. This equipment is mainly dedicated to the etching of nanostructures for layers containing in particular silicon and germanium.
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ICP Sentech SI500 Fluor
ICP Sentech SI500 Fluor
Caractéristiques
Mask : Electro-and photo-sensible resist, SiO2, Si3N4
Gas Line : SF6, CF4, C4F8, CHF3, O2 (x2), Ar, N2
Wafer Holder : 6” 4” 2” / Chuck : mechanical
Wafers thermalization : -25°C à 250°C ; He-backside contact
End point detector : Laser interferometry 670 nm
HF generators power ICP : 1200 Watts at 13,56 MHz
HF generators power platen : 600 Watts at 13,56 MHz
Option : Mask and etch Material resistricted
Applications
silicon nitride
etching siicon nitride selectivity 1:3
Contacts : samson
silica
etching silica selectivity :1:2
Contacts : samson
silicon
etching deep silicon high selectivity 1:7
Contacts : samson
shallow silicon
etching silicon shallow selectivity 1:3
Contacts : samson
