ICP Sentech SI500

Fluorine plasma   /   SENTECH Instruments GmbH

Contacts :   EDMOND   Samson     /   LE ROUX   Xavier

ICP-RIE Fluorine plasma etcher SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. This equipment is mainly dedicated to the etching of nanostructures for layers containing in particular silicon and germanium.

  • Space
    ICP Sentech SI500 Fluor
  • Space
    ICP Sentech SI500 Fluor

Caractéristiques

  • Mask   :   Electro-and photo-sensible resist, SiO2, Si3N4
  • Gas Line   :   SF6, CF4, C4F8, CHF3, O2 (x2), Ar, N2
  • Wafer Holder   :   6” 4” 2” / Chuck : mechanical
  • Wafers thermalization   :   -25°C à 250°C ; He-backside contact
  • End point detector   :   Laser interferometry 670 nm
  • HF generators power ICP   :   1200 Watts at 13,56 MHz
  • HF generators power platen   :   600 Watts at 13,56 MHz
  • Option   :   Mask and etch Material resistricted
Applications

silicon nitride

etching siicon nitride selectivity 1:3

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Contacts : samson

silica

etching silica selectivity :1:2

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Contacts : samson

silicon

etching deep silicon high selectivity 1:7

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Contacts : samson

shallow silicon

etching silicon shallow selectivity 1:3

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Contacts : samson