MEB_Philips_XL30SFEG

FEG Schottky Scanning Electron Microscope (UHR and HR modes).   /   Philips/FEI

Contacts :   BAYLE   Fabien     /   DUPUIS   Christophe   /   MAHUT   Frederic

High resolution Scanning Electron Microscope equipped with an INCA EDS system, BSE-STEM detector.

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    column XL 30 S
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    Colonne
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    Vue générale
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    Overview of the system

Caractéristiques

  • Detectors   :   SE(ETD, TLD), BSE, BSE-STEM, EDX-SSD 10mm^2 (ponctual, by region of interest, line profile, mapping)
  • Max sample size   :   4 inches
  • Resolution   :   1.5nm @10kV WD=5mm
  • Resolution   :   2.5nm @ 1kV WD=1.5mm
  • Stage   :   4 axis motorized stage (X Y Z Rotation), manual Tilt -15° to 70°
  • Electron gun   :   FEG Schottky
  • Objective lens   :   HR (Search mode, field-free), UHR (Immersion)
  • Voltage   :   500V - 30kV
  • Magnification   :   x30 to x600000
  • Spot size   :   1 to 3 (é imaging), 5 to 6 (EDX)
  • Others   :   Column Hexalens (Coulomb tube beam booster for enhancing low voltage resolution)
  • Eucentric height   :   5 mm
Expertises

Cross-sectional / tilted observations

Electron Imaging and elemental Analysis of thin film layer deposits / coatings and etching profiles (roughness) / epitaxial growths (nanowires, nanocrystals ...)

Contacts : Fabien BAYLE

Patterning observations

Electron imaging and elemental Analysis of micro and nanostructure patterns formed by lithography / epitaxy

Contacts : Fabien BAYLE

Nanomanipulation

Pick and Place of nanoparticles

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Contacts : Fabien BAYLE

EDX analysis

Local EDX analysis (Region of Interest) and Mapping with enhanced resolution of Field Emission Gun (FEG) é source (e.g. on cross-section layers)

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Contacts : Fabien BAYLE

Applications

Waveguides

Waveguides structures obtained after lithography and etching

Contacts : Fabien BAYLE