Centre for Nanoscience
and Nanotechnology

  • CNRS

PIMENT Platform

EBL Raith 150

30kV Electron Beam Lithography system   /   RAITH GMBH

Contacts :   AASSIME   Abdelhanin     /   COUDEVYLLE   Jean-rene

Raith 150 direct write lithography system is a Scanning Electron Microscope (SEM) combined with a hardware to perform electron beam exposures. It includes a beam blanker with a switch of 30 ns rise time and 200 kHz repetition frequency. The stage is controlled with a near 2 nm high precision X-Y displacement, thanks to laser interferometry. The sample size can vary from few millimeters up to 8” wafers.

  • Space
    Raith_150
  • Space
    Raith 150

Caractéristiques

  • Emitter   :   Field effect gun
  • Energy   :   0.2 keV to 30 keV
  • Frequency   :   10 MHz
  • Current   :   5 pA to 5 nA
  • Apertures   :   7.5 µm, 10 µm, 20 µm, 30 µm, 60 µm, 120 µm
  • Resolution   :   sub 20 nm
  • Positioning accuracy   :   2 nm
  • Writing field   :   1 µm² to 1000 µm² (100000x to 100x)
  • Substrates   :   1 cm square to 8 inches wafer
  • Alignment accuracy   :   <30 nm
  • Magnification   :   20x to 1000000x
Expertises

Patterning on image

Special feature Draw an image and apply a gds onto it. It is mainly used for contacting nano-object by e-beam lithography. The picture features a single SI nanowire with its contact pads made by lift off /evaporation of Ti (10 nm) / Au (160 nm).

  • Space

Contacts : Jean-René Coudevylle

Applications

Sub 100nm lines for lift off applications

The picture feature the resist with the metal above before the lift off (inward angle profil) and the sub 100nm pattern after dissolving the resist (lift off step).

  • Space
  • Space

Contacts : Sébastien Boissier, Quandela Start-up.