Raith 150

Electron beam lithography   /   RAITH

Contacts :   AASSIME   Abdelhanin     /   COUDEVYLLE   Jean-Rene

Raith 150 direct write lithography system is a Scanning Electron Microscope (SEM) combined with a hardware to perform electron beam exposures. It includes a beam blanker with a switch of 30 ns rise time and 200 kHz repetition frequency. The stage is controlled with a near 2 nm high precision X-Y displacement, thanks to laser interferometry. The sample size can vary from few millimeters up to 8” wafers.

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    Raith 150

Caractéristiques

  • Emitter   :   Field effect gun
  • Others   :   0.2 keV to 30keV
  • Frequency   :   10 MHz
  • Current   :   5pA to 5nA
  • Others   :   7.5 µm, 10 µm, 20 µm, 30 µm, 60 µm, 120 µm
  • Resolution   :   <20 nm
  • Positioning accuracy   :   2 nm
  • Others   :   1µm² to 1000µm² (100000x to 100x)
  • Substrates   :   1 cm square to 8 inches wafer
  • Alignment accuracy   :   <30 nm
  • Magnification   :   20x to 1000000x
Expertises

Patterning on image

Special feature Draw an image and apply a gds onto it. It is mainly used for contacting nano-object by e-beam lithography. The picture features a single SI nanowire with its contact pads made by lift off /evaporation of Ti (10 nm) / Au (160 nm).

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Contacts : Jean-René Coudevylle

Applications

Sub 100nm lines for lift off applications

The picture feature the resist with the metal above before the lift off (inward angle profil) and the sub 100nm pattern after dissolving the resist (lift off step).

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Contacts : Sébastien Boissier, Quandela Start-up.