Centre for Nanoscience
and Nanotechnology

  • CNRS

PIMENT Platform

PECVD Apsy

Plasma Enhanced Chemical Vapor Deposition   /   STS

Contacts :   MAILLARD   François     /   DURNEZ   Alan

Location : N.C.

Deposition of SiOx, SiNx, SiONx and Si-H. The two generators 13.56MHz (HighFrequency) and 380kHz (LowFrequency) are allowing stress control of silicon nitride films from -1.6GPa to +600MPa. Applications: single Anti-reflective coating, isolation, etch mask (dry or wet)....

  • Space
    PECVD Apsy/STS
  • Space
    PECVDApsy

Caractéristiques

  • Materials   :   SiNx, SiOx, SiONx, a:Si-H
  • Temperature   :   100-400°C
  • Max sample size   :   200mm-8inches
  • Max sample size   :   4mm height
Expertises

High or Low SiN stress coatings

Two frequencies are available (2 x RF generators), allowing stress control in the deposited thin films and especially for silicon nitride films.

  • Space

Contacts : francois.maillard@c2n.upsaclay.fr, moustafa.el-kurdi@c2n.upsaclay.fr

Control of refractive index of oxynitride films

Control of refractive index between silicon nitride and silicon oxide

  • Space

Contacts : francois.maillard@c2n.upsaclay.fr