PECVD Apsy/STS

Plasma Enhanced Chemical Vapor Deposition HF/LF Generators - Dielectric thin films / STS

Contacts : MAILLARD François / DURNEZ Alan

Deposition of SiOx, SiNx, SiONx and Si-H. The two generators 13.56MHz (HighFrequency) and 380kHz (LowFrequency) are allowing stress control of silicon nitride films from -1.6GPa to +600MPa. Applications: single Anti-reflective coating, isolation, etch mask (dry or wet)....

PECVD Apsy/STS
PECVDApsy

Caractéristiques

Materials : SiNx, SiOx, SiONx, a:Si-H
Temperature : 100-400°C
Max sample size : 200mm-8inches
Max sample size : 4mm height

Expertises

High or Low SiN stress coatings

Two frequencies are available (2 x RF generators), allowing stress control in the deposited thin films and especially for silicon nitride films.

Contacts : francois.maillard@c2n.upsaclay.fr, moustafa.el-kurdi@c2n.upsaclay.fr

Control of refractive index of oxynitride films

Control of refractive index between silicon nitride and silicon oxide

Contacts : francois.maillard@c2n.upsaclay.fr