ALD Fiji 200

Atomic Layer Deposition equipment - Dielectric thin films   /   Cambridge Nanotech

Contacts :   DURNEZ   Alan     /   MAILLARD   François

Thermal (H2O reactant) or Plasma-Enhanced Atomic Layer Deposition

  • Space
    ALD1

Caractéristiques

  • Deposit   :   Al2O3 (100-250°c) standard
  • Deposit   :   SiO2 (150-250°c) standard
  • Deposit   :   HfO2 (100-250°c) standard
  • Max sample size   :   8 inches
  • Max sample size   :   6.5 mm height
  • ICP power   :   300W
  • Gas Line   :   N2
  • Gas Line   :   O2
  • Gas Line   :   NH3
Applications

Conformal depositions

ALD technique allows very conformal and homogeneous coatings.

  • Space

Contacts : alan.durnez@c2n.upsaclay.fr

Interfacial layers

ALD is used to deposit interfacial layers for press-bonding of wafers (III-V on Silicon)

  • Space

Contacts : alan.durnez@c2n.upsaclay.fr